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Kvantovaya Elektronika, 1990, Volume 17, Number 4, Pages 416–418 (Mi qe5682)  

Physical processes in active media

Influence of the surface on degradation in InGaAsP/InP double heterostructures

G. Beister, J. Maege, G. Richter
Abstract: An investigation was made of degradation phenomena in InGaAsP/InP light-emitting diodes such as Burrus diodes at elevated temperatures and constant current. Typical changes in the current-voltage and power-current characteristics were explained in terms of surface phenomena. The results agree with earlier results for InGaAsP/InP laser diodes. In most cases, a correlation was observed between an increase in the surface current and the degradation, characterized by an activation energy of approximately 0.6 eV.
Received: 18.08.1989
English version:
Soviet Journal of Quantum Electronics, 1990, Volume 20, Issue 4, Pages 350–352
DOI: https://doi.org/10.1070/QE1990v020n04ABEH005682
Bibliographic databases:
Document Type: Article
UDC: 621.375.826
PACS: 42.55.Px, 42.60.Jf, 42.60.By, 78.68.+m
Language: Russian


Citation: G. Beister, J. Maege, G. Richter, “Influence of the surface on degradation in InGaAsP/InP double heterostructures”, Kvantovaya Elektronika, 17:4 (1990), 416–418 [Sov J Quantum Electron, 20:4 (1990), 350–352]
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