|
Physical processes in active media
Influence of the surface on degradation in InGaAsP/InP double heterostructures
G. Beister, J. Maege, G. Richter
Abstract:
An investigation was made of degradation phenomena in InGaAsP/InP light-emitting diodes such as Burrus diodes at elevated temperatures and constant current. Typical changes in the current-voltage and power-current characteristics were explained in terms of surface phenomena. The results agree with earlier results for InGaAsP/InP laser diodes. In most cases, a correlation was observed between an increase in the surface current and the degradation, characterized by an activation energy of approximately 0.6 eV.
Received: 18.08.1989
Citation:
G. Beister, J. Maege, G. Richter, “Influence of the surface on degradation in InGaAsP/InP double heterostructures”, Kvantovaya Elektronika, 17:4 (1990), 416–418 [Sov J Quantum Electron, 20:4 (1990), 350–352]
Linking options:
https://www.mathnet.ru/eng/qe5682 https://www.mathnet.ru/eng/qe/v17/i4/p416
|
Statistics & downloads: |
Abstract page: | 106 | Full-text PDF : | 64 | First page: | 1 |
|