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Optical working memory based on injection lasers
N. F. Kovtonyuk, V. V. Kostryukov, V. A. Morozov, V. V. Nikitin, V. D. Samoilov
Abstract:
An investigation of the characteristics of metal–insulator–semiconductor–insulator–metal (MISIM) structures demonstrated that they could be employed as reusable information carriers characterized by a fast response and a sensitivity of 10–6 J/cm2. The information was stored on the basis of the capture of nonequilibrium carriers by the energy levels of surface traps. A system comprising GaAs injection lasers and MISIM silicon structures was used as a working memory with a random access to blocks of information. The operating principle of the memory imposed no restrictions on the coherence of the laser radiation.
Received: 14.03.1973
Citation:
N. F. Kovtonyuk, V. V. Kostryukov, V. A. Morozov, V. V. Nikitin, V. D. Samoilov, “Optical working memory based on injection lasers”, Kvantovaya Elektronika, 1:1 (1974), 78–83 [Sov J Quantum Electron, 4:1 (1974), 41–43]
Linking options:
https://www.mathnet.ru/eng/qe5668 https://www.mathnet.ru/eng/qe/v1/i1/p78
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Abstract page: | 104 | Full-text PDF : | 61 |
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