Theory of the laser threshold of a homogeneous heavily doped semiconductor subjected to a quantizing magnetic field

A theory of the stimulated emission threshold is developed for a homogeneous heavily doped semiconductor in the special case when a quantizing magnetic field affects only the conduction band states. The stimulated emission parameters are calculated. The threshold is found in the spontaneous approximation and in the resonator model with two values of the mode losses. It is shown that the threshold pumping energy decreases exponentially with the magnetic field intensity.