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Kvantovaya Elektronika, 1973, Number 6(18), Pages 117–119
(Mi qe5656)
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Brief Communications
Single-channel injection laser with an emitting region several microns wide
N. P. Ivanov, A. I. Krasil'nikov, V. F. Litvinov, V. I. Molochev, V. V. Nikitin, A. S. Semenov
Abstract:
A description is given of a method for the fabrication of GaAs semiconductor lasers with an emission region several microns wide. The results are given of an investigation of the radiative characteristics of such lasers. It is reported that the emission is of the single-mode type when the threshold is exceeded by a factor of 3–4.
Received: 25.09.1972
Revised: 06.07.1973
Citation:
N. P. Ivanov, A. I. Krasil'nikov, V. F. Litvinov, V. I. Molochev, V. V. Nikitin, A. S. Semenov, “Single-channel injection laser with an emitting region several microns wide”, Kvantovaya Elektronika, 6 (1973), 117–119 [Sov J Quantum Electron, 3:6 (1974), 525–526]
Linking options:
https://www.mathnet.ru/eng/qe5656 https://www.mathnet.ru/eng/qe/y1973/i6/p117
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| Abstract page: | 128 | | Full-text PDF : | 46 |
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