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Kvantovaya Elektronika, 1990, Volume 17, Number 2, Pages 247–249 (Mi qe5583)  

Laser applications

Reflection of far-infrared radiation from a hot plasma in a semiconductor

E. A. Andryushin, R. I. Ekzhanov, I. N. Sisakyan, A. B. Shvartsburg, A.V. Shepelev
Abstract: An analysis is made of the optical properties of a semiconductor plasma in the far-infrared and submillimeter ranges. Special features of the nonlinear optical characteristics of semiconductors observed in this range are discussed. Estimates are obtained of the limiting values of the switching times when the incident radiation is controlled by heating of a semiconductor plasma.
Received: 22.02.1989
English version:
Soviet Journal of Quantum Electronics, 1990, Volume 20, Issue 2, Pages 195–197
DOI: https://doi.org/10.1070/QE1990v020n02ABEH005583
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 78.20.Ci, 78.30.-j, 72.30.+q
Language: Russian


Citation: E. A. Andryushin, R. I. Ekzhanov, I. N. Sisakyan, A. B. Shvartsburg, A.V. Shepelev, “Reflection of far-infrared radiation from a hot plasma in a semiconductor”, Kvantovaya Elektronika, 17:2 (1990), 247–249 [Sov J Quantum Electron, 20:2 (1990), 195–197]
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    Квантовая электроника Quantum Electronics
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