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Laser applications
Reflection of far-infrared radiation from a hot plasma in a semiconductor
E. A. Andryushin, R. I. Ekzhanov, I. N. Sisakyan, A. B. Shvartsburg, A.V. Shepelev
Abstract:
An analysis is made of the optical properties of a semiconductor plasma in the far-infrared and submillimeter ranges. Special features of the nonlinear optical characteristics of semiconductors observed in this range are discussed. Estimates are obtained of the limiting values of the switching times when the incident radiation is controlled by heating of a semiconductor plasma.
Received: 22.02.1989
Citation:
E. A. Andryushin, R. I. Ekzhanov, I. N. Sisakyan, A. B. Shvartsburg, A.V. Shepelev, “Reflection of far-infrared radiation from a hot plasma in a semiconductor”, Kvantovaya Elektronika, 17:2 (1990), 247–249 [Sov J Quantum Electron, 20:2 (1990), 195–197]
Linking options:
https://www.mathnet.ru/eng/qe5583 https://www.mathnet.ru/eng/qe/v17/i2/p247
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Statistics & downloads: |
Abstract page: | 179 | Full-text PDF : | 95 | First page: | 1 |
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