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Kvantovaya Elektronika, 1990, Volume 17, Number 2, Pages 205–206 (Mi qe5573)  

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Amplification of λ = 172 nm radiation in atmospheric-pressure xenon excited by a high-power proton beam

A. A. Kuznetsov, S. S. Sulakshin
Abstract: Excitation of atmospheric-pressure xenon by a proton beam (E = 500 keV, j = 200 A/cm2, τ0.5 = 80 ns) resulted in amplification due to a transition in the xenon dimer (λ = 172 nm). The maximum gain was 6 m – 1 at the xenon pressure of 3 atm when the pump power density was 50 MW/cm3.
Received: 25.07.1989
English version:
Soviet Journal of Quantum Electronics, 1990, Volume 20, Issue 2, Pages 160–161
DOI: https://doi.org/10.1070/QE1990v020n02ABEH005573
Bibliographic databases:
Document Type: Article
UDC: 539.9:537.82
PACS: 42.55.Lt, 42.60.By, 42.60.Lh, 42.60.Da
Language: Russian


Citation: A. A. Kuznetsov, S. S. Sulakshin, “Amplification of λ = 172 nm radiation in atmospheric-pressure xenon excited by a high-power proton beam”, Kvantovaya Elektronika, 17:2 (1990), 205–206 [Sov J Quantum Electron, 20:2 (1990), 160–161]
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    Квантовая электроника Quantum Electronics
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