Theory of stimulated glide of dislocations in laser semiconductor crystals under strong pumping conditions

The influence of excess carriers on the overcoming of pinning centers of gliding dislocations is analyzed for the case when such carriers are captured by a dislocation near a pinning center or by the pinning center itself. Resonance defect-forming electron capture is assumed. It is shown that at subcritical densities of excess carriers a dislocation travels by successive detachment from pinning centers, but when this density (rate of pumping) reaches a critical value, the dislocation velocity increases abruptly to a value expected for obstacle-free motion.