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Kvantovaya Elektronika, 1982, Volume 9, Number 6, Pages 1264–1267 (Mi qe5228)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristics

I. S. Goldobin, A. T. Semenov, V. P. Tabunov, S. D. Yakubovich
Full-text PDF (646 kB) Citations (2)
Abstract: A modified method for the determination of the amplifying characteristics of active media from the dependence of the amplified spontaneous radiation (superluminescence) spectrum on the geometry of the active region was applied to stripe heterolasers which had no feedback. The spectral dependences were obtained for the main parameters of laser amplifiers: the gain, sensitivity, and dynamic range of linear amplification of a narrow-band input signal. These parameters of heterojunction amplifiers were praaically as good as those of homostructure amplifiers operating at cryogenic temperatures.
Received: 23.08.1981
English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 6, Pages 800–802
DOI: https://doi.org/10.1070/QE1982v012n06ABEH005228
Bibliographic databases:
Document Type: Article
UDC: 621.375.8.038.825.4
PACS: 42.55.Px, 73.40.Lq
Language: Russian


Citation: I. S. Goldobin, A. T. Semenov, V. P. Tabunov, S. D. Yakubovich, “Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristics”, Kvantovaya Elektronika, 9:6 (1982), 1264–1267 [Sov J Quantum Electron, 12:6 (1982), 800–802]
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  • https://www.mathnet.ru/eng/qe5228
  • https://www.mathnet.ru/eng/qe/v9/i6/p1264
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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