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Brief Communications
Quantum size effects in a periodic InSb–GaAs structure and in Gaxln1–xAsySb1–y films prepared by laser evaporation
K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan
Abstract:
It was found that a periodic InSb-GaAs structure had the properties of a size-quantized InSb film on its own. The quantum size effect was observed for the first time in Gaxln1–xAsySb1–y films.
Received: 12.11.1983
Citation:
K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan, “Quantum size effects in a periodic InSb–GaAs structure and in Gaxln1–xAsySb1–y films prepared by laser evaporation”, Kvantovaya Elektronika, 11:6 (1984), 1264–1266 [Sov J Quantum Electron, 14:6 (1984), 854–655]
Linking options:
https://www.mathnet.ru/eng/qe5192 https://www.mathnet.ru/eng/qe/v11/i6/p1264
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Statistics & downloads: |
Abstract page: | 115 | Full-text PDF : | 61 | First page: | 1 |
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