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Kvantovaya Elektronika, 1984, Volume 11, Number 6, Pages 1264–1266 (Mi qe5192)  
Brief Communications

Quantum size effects in a periodic InSb–GaAs structure and in Gaxln1–xAsySb1–y films prepared by laser evaporation

K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan
Full-text PDF (548 kB)
Abstract: It was found that a periodic InSb-GaAs structure had the properties of a size-quantized InSb film on its own. The quantum size effect was observed for the first time in Gaxln1–xAsySb1–y films.
Received: 12.11.1983
English version:
Soviet Journal of Quantum Electronics, 1984, Volume 14, Issue 6, Pages 854–655
DOI: https://doi.org/10.1070/QE1984v014n06ABEH005192
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 81.15.Ef, 42.62.-b, 78.66.Fd
Language: Russian


Citation: K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan, “Quantum size effects in a periodic InSb–GaAs structure and in Gaxln1–xAsySb1–y films prepared by laser evaporation”, Kvantovaya Elektronika, 11:6 (1984), 1264–1266 [Sov J Quantum Electron, 14:6 (1984), 854–655]
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