K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan, “Quantum size effects in a periodic InSb–GaAs structure and in Gaxln1–xAsySb1–y films prepared by laser evaporation”, Kvantovaya Elektronika, 11:6 (1984), 1264–1266 [Sov J Quantum Electron, 14:6 (1984), 854

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Kvantovaya Elektronika, 1984, Volume 11, Number 6, Pages 1264–1266 (Mi qe5192)

Brief Communications

Quantum size effects in a periodic InSb–GaAs structure and in Ga_xln_1–xAs_ySb_1–y films prepared by laser evaporation

K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan

Full-text PDF (548 kB)

Abstract: It was found that a periodic InSb-GaAs structure had the properties of a size-quantized InSb film on its own. The quantum size effect was observed for the first time in Ga_xln_1–xAs_ySb_1–y films.

Received: 12.11.1983

English version:
Soviet Journal of Quantum Electronics, 1984, Volume 14, Issue 6, Pages 854–655
DOI: https://doi.org/10.1070/QE1984v014n06ABEH005192

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 81.15.Ef, 42.62.-b, 78.66.Fd

Language: Russian

Citation: K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan, “Quantum size effects in a periodic InSb–GaAs structure and in Ga_xln_1–xAs_ySb_1–y films prepared by laser evaporation”, Kvantovaya Elektronika, 11:6 (1984), 1264–1266 [Sov J Quantum Electron, 14:6 (1984), 854–655]

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https://www.mathnet.ru/eng/qe5192

https://www.mathnet.ru/eng/qe/v11/i6/p1264

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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