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Kvantovaya Elektronika, 1984, Volume 11, Number 4, Pages 748–752 (Mi qe5023)  

This article is cited in 4 scientific papers (total in 4 papers)

Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition

N. K. Berger, E. A. Zhukov, V. V. Novokhatskiĭ
Full-text PDF (871 kB) Citations (4)
Abstract: The use of a semiconductor-metal phase transition for wavefront reversal of laser radiation was proposed. An investigation was made of nonlinear reflection of CO2 laser radiation at a phase transition in VO2. A three-wave interaction on a VO2 surface was achieved using low-power cw and pulsed CO2 lasers. In the first case, the intensity reflection coefficient was 0.5% for a reference wave intensity of 0.9 W/cm2 and in the second case, it was 42% for a threshold reference wave energy density of 0.6–0.8 mJ/cm2.
Received: 03.06.1983
English version:
Soviet Journal of Quantum Electronics, 1984, Volume 14, Issue 4, Pages 505–508
DOI: https://doi.org/10.1070/QE1984v014n04ABEH005023
Bibliographic databases:
Document Type: Article
UDC: 621.375.826
PACS: 42.65.Hw, 42.55.Lt, 42.60.Jf
Language: Russian


Citation: N. K. Berger, E. A. Zhukov, V. V. Novokhatskiĭ, “Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition”, Kvantovaya Elektronika, 11:4 (1984), 748–752 [Sov J Quantum Electron, 14:4 (1984), 505–508]
Linking options:
  • https://www.mathnet.ru/eng/qe5023
  • https://www.mathnet.ru/eng/qe/v11/i4/p748
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Full-text PDF :70
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