A. S. Adlivankin, N. D. Zhukov, V. M. Raĭgorodskiĭ, S. A. Sosnovskiĭ, L. I. Shestak, “Characteristics of radiation emitted by GaSb/GaAlAsSb injection heterolasers”, Kvantovaya Elektronika, 10:11 (1983), 2352–2355 [Sov J Quantum Electron, 13:11 (1983), 1532

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Kvantovaya Elektronika, 1983, Volume 10, Number 11, Pages 2352–2355 (Mi qe4979)

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Characteristics of radiation emitted by GaSb/GaAlAsSb injection heterolasers

A. S. Adlivankin, N. D. Zhukov, V. M. Raĭgorodskiĭ, S. A. Sosnovskiĭ, L. I. Shestak

Full-text PDF (787 kB) Citations (2)

Abstract: An experimental investigation was made of the emission characteristics of GaSb/GaAlAsSb injection heteroiasers in the temperature range from –70°C to +70°C. A study was made of the relationship between the temperature dependences of the threshold current and of the differential quantum efficiency, on the one hand, and the temperature-induced changes in the near-field pattern and in the internal parameters of the lasers, on the other. Continuous stimulated emission was achieved right up to –10°C.

Received: 08.02.1983

English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 11, Pages 1532–1534
DOI: https://doi.org/10.1070/QE1983v013n11ABEH004979

Bibliographic databases:

Document Type: Article

UDC: 621.378.325

PACS: 42.55.Px

Language: Russian

Citation: A. S. Adlivankin, N. D. Zhukov, V. M. Raĭgorodskiĭ, S. A. Sosnovskiĭ, L. I. Shestak, “Characteristics of radiation emitted by GaSb/GaAlAsSb injection heterolasers”, Kvantovaya Elektronika, 10:11 (1983), 2352–2355 [Sov J Quantum Electron, 13:11 (1983), 1532–1534]

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https://www.mathnet.ru/eng/qe4979

https://www.mathnet.ru/eng/qe/v10/i11/p2352

This publication is cited in the following 2 articles:

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