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This article is cited in 1 scientific paper (total in 1 paper)
Injection traveling-wave laser amplifier based on a (GaAI)As double heterostructure
I. S. Goldobin, V. N. Luk'yanov, A. F. Solodkov, V. P. Tabunov, S. D. Yakubovich
Abstract:
Theoretical and experimental investigations were made of single-pass amplification of narrowband optical signals in resonator-free stripe heterostructures operated at room temperature. The following optophysical characteristics of laser amplifiers of this type were recorded: the maximum gain was 26 dB; the output signal/background ratio was up to 7 dB without spectral selection and up to 24 dB when an output filter with a pass band 0.1 nm wide was used; the sensitivity was of the order of 100 nW; the output signal power was up to 20 mW; the linear operation range was in excess of 20 dB; the response time in the linear region was less than 1 nsec. The experimental results were in satisfactory agreement with calculations.
Received: 16.03.1983
Citation:
I. S. Goldobin, V. N. Luk'yanov, A. F. Solodkov, V. P. Tabunov, S. D. Yakubovich, “Injection traveling-wave laser amplifier based on a (GaAI)As double heterostructure”, Kvantovaya Elektronika, 11:2 (1984), 375–381 [Sov J Quantum Electron, 14:2 (1984), 255–259]
Linking options:
https://www.mathnet.ru/eng/qe4857 https://www.mathnet.ru/eng/qe/v11/i2/p375
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