Directional crystallization as a result of laser annealing of films

An experimental investigation was made of laser recrystallization of semiconductor films on amorphous substrates. Semitransparent masks were used to create a nonuniform temperature distribution with a specified symmetry on the surface of a sample and this stimulated oriented growth. The method was used in preparing oriented PbTe and Ge films with the (100) and (111) orientations. The likely mechanism of formation of oriented films on nonorienting substrates was analyzed.