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Kvantovaya Elektronika, 1983, Volume 10, Number 8, Pages 1696–1699 (Mi qe4589)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Investigation of the relaxation mechanism of the lower active levels of a photochemical XeO laser

A. M. Pravilov, I. I. Sidorov, V. A. Skorokhodov
Full-text PDF (645 kB) Citations (1)
Abstract: An investigation was made of the luminescence of an excimer XeO $(a^1\Sigma^+,b^1\Pi)$, formed as a result of the reactions O $(^1D)+$ Xe $\rightleftarrows$ XeO $(a^1\Sigma^+,b^1\Pi)$, O $(^1S)+$ Xe $+$ Xe $\to$ XeO $^*(d^1\Sigma^+)+$ Xe, and XeO $^*(d^1\Sigma^+)\to$ XeO $(a^1\Sigma^+,b^1\Pi)+h\nu$. The transition in the last reaction involved a level of VeO $(a^1\Sigma^+,b^1\Pi)$ lying above the lowest of the points of crossing of these and of $X^3\Pi$, $A^3\Sigma$ states, so that the molecules of XeO $(a^1\Sigma^+,b^1\Pi)$ predissociated rapidly.
Received: 03.11.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 8, Pages 1119–1121
DOI: https://doi.org/10.1070/QE1983v013n08ABEH004589
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Fn, 33.80.Gj
Language: Russian


Citation: A. M. Pravilov, I. I. Sidorov, V. A. Skorokhodov, “Investigation of the relaxation mechanism of the lower active levels of a photochemical XeO laser”, Kvantovaya Elektronika, 10:8 (1983), 1696–1699 [Sov J Quantum Electron, 13:8 (1983), 1119–1121]
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  • https://www.mathnet.ru/eng/qe/v10/i8/p1696
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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