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Kvantovaya Elektronika, 1983, Volume 10, Number 8, Pages 1560–1564 (Mi qe4563)  

This article is cited in 1 scientific paper (total in 1 paper)

Characteristics of the process of filling the upper active level of neodymium in γ -La2S3 semiconductor crystals and La2S3·2Ga2O3 glasses

A. A. Kamarzin, A. A. Mamedov, V. A. Smirnov, A. A. Sobol, V. V. Sokolov, I. A. Shcherbakov
Full-text PDF (884 kB) Citations (1)
Abstract: An analysis was made of the process of filling the 4F3/2 metastable state of Nd3+ in two semiconductor materials, crystalline γ -La2S3:Nd3+ and glassy La2S3·2Ga2O3:Nd3+, as a result of nonresonant Stokes excitation. It was found that the rate of nonradiative transitions from the upper excited states of Nd3+ to the metastable state was considerably higher in the glass than in the crystal. Pumping at wavelengths corresponding to the fundamental absorption band resulted in more efficient excitation of the Nd3+ ions in the glass than in the crystal. It was concluded that semiconducting glass of the La2O3·2Ga2O3:Nd3+ composition was free of the negative properties which made the optical pumping of the crystal ineffective.
Received: 07.09.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 8, Pages 1027–1029
DOI: https://doi.org/10.1070/QE1983v013n08ABEH004563
Bibliographic databases:
Document Type: Article
UDC: 621.373.8.038.825
PACS: 32.80.Bx, 42.50.+q
Language: Russian


Citation: A. A. Kamarzin, A. A. Mamedov, V. A. Smirnov, A. A. Sobol, V. V. Sokolov, I. A. Shcherbakov, “Characteristics of the process of filling the upper active level of neodymium in γ -La2S3 semiconductor crystals and La2S3·2Ga2O3 glasses”, Kvantovaya Elektronika, 10:8 (1983), 1560–1564 [Sov J Quantum Electron, 13:8 (1983), 1027–1029]
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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