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This article is cited in 1 scientific paper (total in 1 paper)
Characteristics of the process of filling the upper active level of neodymium in γ -La2S3 semiconductor crystals and La2S3·2Ga2O3 glasses
A. A. Kamarzin, A. A. Mamedov, V. A. Smirnov, A. A. Sobol, V. V. Sokolov, I. A. Shcherbakov
Abstract:
An analysis was made of the process of filling the 4F3/2 metastable state of Nd3+ in two semiconductor materials, crystalline γ -La2S3:Nd3+ and glassy La2S3·2Ga2O3:Nd3+, as a result of nonresonant Stokes excitation. It was found that the rate of nonradiative transitions from the upper excited states of Nd3+ to the metastable state was considerably higher in the glass than in the crystal. Pumping at wavelengths corresponding to the fundamental absorption band resulted in more efficient excitation of the Nd3+ ions in the glass than in the crystal. It was concluded that semiconducting glass of the La2O3·2Ga2O3:Nd3+ composition was free of the negative properties which made the optical pumping of the crystal ineffective.
Received: 07.09.1982
Citation:
A. A. Kamarzin, A. A. Mamedov, V. A. Smirnov, A. A. Sobol, V. V. Sokolov, I. A. Shcherbakov, “Characteristics of the process of filling the upper active level of neodymium in γ -La2S3 semiconductor crystals and La2S3·2Ga2O3 glasses”, Kvantovaya Elektronika, 10:8 (1983), 1560–1564 [Sov J Quantum Electron, 13:8 (1983), 1027–1029]
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https://www.mathnet.ru/eng/qe4563 https://www.mathnet.ru/eng/qe/v10/i8/p1560
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