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Kvantovaya Elektronika, 1995, Volume 22, Number 7, Pages 745–748 (Mi qe451)  

This article is cited in 4 scientific papers (total in 4 papers)

Laser applications and other topics in quantum electronics

Electron-beam-induced absorption of ArF, KrF, and XeF laser radiation in optical materials

V. S. Barabanov, P. B. Sergeev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (190 kB) Citations (4)
Abstract: Measurements were made of the absorption of laser radiation at the wavelengths of 193, 248, and 353 nm in optical materials at the moment of action of an electron beam. The dependence of the optical density of a material on the power density of the electron beam was linear. The coefficient of proportionality κ in this dependence was a parameter of the material and it was governed by the properties of short-lived colour centres. The value of κ was determined for MgF2, CaF2, BaF2, and Al2O3 crystals, as well as for quartz glasses. In the case of MgF2 the parameter was κ = 29 ± 6, 150 ± 20, and 14 ± 6 cm2 GW-1 at λ = 193, 248, and 353 nm, respectively. For CaF2 and BaF2 its value was κ ≈ 100 cm2 GW-1. Amplification was observed in Al2O3 at λ = 193 and 248 nm: in this case κ was negative: –2.0 and –0.5 cm2 GW-1, respectively.
Received: 11.11.1994
English version:
Quantum Electronics, 1995, Volume 25, Issue 7, Pages 717–720
DOI: https://doi.org/10.1070/QE1995v025n07ABEH000451
Bibliographic databases:
Document Type: Article
PACS: 42.70.-a, 61.80.Fe, 42.55.Gp
Language: Russian


Citation: V. S. Barabanov, P. B. Sergeev, “Electron-beam-induced absorption of ArF, KrF, and XeF laser radiation in optical materials”, Kvantovaya Elektronika, 22:7 (1995), 745–748 [Quantum Electron., 25:7 (1995), 717–720]
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  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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