Kinetics of recovery of luminescence properties of gallium arsenide single crystals irradiated with high-energy electrons

An investigation was made of the kinetics of changes in the luminescence and laser properties of GaAs as a result of irradiation with 600-keVelectrons (pulsed electron current density, 30 A/cm²) and subsequent annealing at 300°K. An increase in the intensity of the photoluminescence emitted by n-type GaAs:Te crystals and a reduction in the laser threshold value of the pumping current were observed. These changes depended on the density of the electron current, the total absorbed dose, and the parameters of the original crystals. No improvement was observed for undoped epitaxial samples. A qualitative explanation of the effects observed was put forward.