Chemical vapour deposition of boron nitride fillms stimulated by ultraviolet radiation pulses from a KrF excimer laser

Boron nitride films were synthesised for the first time from the vapour phase under the action of high-intensity ultraviolet radiation pulses from a KrF laser. A study was made of the dependences of the deposition rates on the laser energy density, substrate temperature, and borazine pressure. The optimal conditions for the attainment of the highest deposition rates (about 0.1 nm per pulse) were determined. Raman and Auger electron spectroscopy methods demonstrated that the main component of the deposited films was stoichiometric hexagonal boron nitride. The possibility of laser deposition of cubic boron nitride films was considered.