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Kvantovaya Elektronika, 1972, Number 2(8), Pages 96–98 (Mi qe4410)  

Brief Communications

Use of a semiconductor laser diode as a modulator of gas laser radiation

V. S. Abramov, V. V. Kobzev, Yu. A. Moma, M. V. Nevskii
Abstract: It was found experimentally that the radiation of a gas laser could be modulated and amplified by a semiconductor laser diode. Pulse modulation of the Ar–O2 gas laser radiation was achieved using a GaAs diode with antireflection-coated or uncoated faces. The power of the radiation passed through the diode increased by a factor of 7–10 under pulse conditions (pure amplification). The top of the modulated pulse was distorted by the heat evolved in the active region of the diode. The limitations imposed on the pulse duration by this heating effect were estimated.
Received: 25.06.1971
Revised: 09.12.1971
English version:
Soviet Journal of Quantum Electronics, 1972, Volume 2, Issue 2, Pages 170–171
DOI: https://doi.org/10.1070/QE1972v002n02ABEH004410
Document Type: Article
UDC: 621.378.324+621.378.334
PACS: 42.55.Lt, 42.60.By, 42.60.Fc, 42.60.Jf, 42.79.Hp
Language: Russian


Citation: V. S. Abramov, V. V. Kobzev, Yu. A. Moma, M. V. Nevskii, “Use of a semiconductor laser diode as a modulator of gas laser radiation”, Kvantovaya Elektronika, 2 (1972), 96–98 [Sov J Quantum Electron, 2:2 (1972), 170–171]
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