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Kvantovaya Elektronika, 1972, Number 2(8), Pages 77–83 (Mi qe4403)  

Optical gain of heavily doped semiconductors

A. G. Aleksanyan, I. A. Poluèktov, Yu. M. Popov
Abstract: A calculation is given of the optical gain resulting from band–band transitions in a heavily doped semiconductor. Analytic expressions, applicable in a wide range of temperatures and impurity concentrations, are obtained for the electron and hole quasi-Fermi levels. Qualitative features of the results obtained are discussed. Examples are given of calculations of laser threshold characteristics for the band–band transitions considered here.
Received: 26.04.1971
English version:
Soviet Journal of Quantum Electronics, 1972, Volume 2, Issue 2, Pages 150–154
DOI: https://doi.org/10.1070/QE1972v002n02ABEH004403
Document Type: Article
UDC: 621.378.33+535.345.1
PACS: 42.55.Px, 42.70.Hj, 42.70.Nq, 61.72.Ss, 71.20.Nr
Language: Russian


Citation: A. G. Aleksanyan, I. A. Poluèktov, Yu. M. Popov, “Optical gain of heavily doped semiconductors”, Kvantovaya Elektronika, 2 (1972), 77–83 [Sov J Quantum Electron, 2:2 (1972), 150–154]
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