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Kvantovaya Elektronika, 1983, Volume 10, Number 7, Pages 1461–1464 (Mi qe4391)  

This article is cited in 10 scientific papers (total in 10 papers)

Brief Communications

Influence of the structure of a gain profile on the lasing dynamics of a solid-state ring laser

N. I. Polushkin, P. A. Khandokhin, Ya. I. Khanin
Abstract: A mechanism is proposed for low-frequency self-modulation of the radiation emitted by a solid-state ring laser. This mechanism is based on the fine structure of the gain profile. A model of a laser with two closely spaced gain profiles is used to find the conditions of instability of unidirectional lasing. A numerical solution of a system of equations describing this situation confirms the correctness of the conclusions of this analysis and it shows that the processes described by the proposed model of a solid-state ring laser are indeed observed experimentally.
Received: 19.07.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 7, Pages 950–951
DOI: https://doi.org/10.1070/QE1983v013n07ABEH004391
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825
PACS: 42.55.Rz
Language: Russian


Citation: N. I. Polushkin, P. A. Khandokhin, Ya. I. Khanin, “Influence of the structure of a gain profile on the lasing dynamics of a solid-state ring laser”, Kvantovaya Elektronika, 10:7 (1983), 1461–1464 [Sov J Quantum Electron, 13:7 (1983), 950–951]
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  • https://www.mathnet.ru/eng/qe/v10/i7/p1461
  • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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