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Kvantovaya Elektronika, 1991, Volume 18, Number 11, Pages 1313–1314 (Mi qe4377)  

Lasers

High-power AlGaAs/GaAs quantum-well injection laser with a wide contact and a narrow angular distribution

O. V. Danilina, A. E. Kosykh, A. S. Logginov, S. A. Pashko
Abstract: An investigation was made of the spectral and the space-time characteristics of the radiation emitted by AlxGa1–xAs/GaAs quantum-well injection lasers with a wide contact. The single-lobe angular divergence was equal to the diffraction limit (0.5°) near the lasing threshold and it increased 1.5-fold when the threshold was exceeded threefold. The power of the radiation emitted in the form of pulses amounted to 150 mW when the pump current was I = 3I th.
Received: 13.06.1991
English version:
Soviet Journal of Quantum Electronics, 1991, Volume 21, Issue 11, Pages 1197–1198
DOI: https://doi.org/10.1070/QE1991v021n11ABEH004377
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Language: Russian


Citation: O. V. Danilina, A. E. Kosykh, A. S. Logginov, S. A. Pashko, “High-power AlGaAs/GaAs quantum-well injection laser with a wide contact and a narrow angular distribution”, Kvantovaya Elektronika, 18:11 (1991), 1313–1314 [Sov J Quantum Electron, 21:11 (1991), 1197–1198]
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    Квантовая электроника Quantum Electronics
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