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Kvantovaya Elektronika, 1983, Volume 10, Number 7, Pages 1332–1337 (Mi qe4357)  

Two-component spatially inhomogeneous (GaAl)As heterojunction laser

I. S. Goldobin, V. N. Luk'yanov, A. T. Semenov, A. F. Solodkov, V. P. Tabunov, S. D. Yakubovich
Abstract: A semiempirical model is used to calculate the watt-ampere characteristics and phase diagrams of heterojunction lasers with spatially inhomogeneous injection. Experimental results were reported of a study of the region of "smooth" turn-on, bistability, and self-modulation in two-component (GaAl)As stripe heterojunction lasers capable of operating continuously at room temperature. The experimental results are compared with calculations, and with similar characteristics of cooled two-component homojunction lasers.
Received: 12.07.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 7, Pages 864–867
DOI: https://doi.org/10.1070/QE1983v013n07ABEH004357
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px
Language: Russian


Citation: I. S. Goldobin, V. N. Luk'yanov, A. T. Semenov, A. F. Solodkov, V. P. Tabunov, S. D. Yakubovich, “Two-component spatially inhomogeneous (GaAl)As heterojunction laser”, Kvantovaya Elektronika, 10:7 (1983), 1332–1337 [Sov J Quantum Electron, 13:7 (1983), 864–867]
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    Квантовая электроника Quantum Electronics
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