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This article is cited in 3 scientific papers (total in 3 papers)
Letters to the editor
Second harmonic generation during laser annealing of the surface of gallium arsenide
S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ
Abstract:
The process of recrystallization of the surface of GaAs during pulsed laser annealing was investigated using generation (by reflection from the surface) of the second harmonic of mode-locked radiation from another laser. The recrystallization time did not exceed 30–40 nsec. The results were accounted for by the melting theory of laser annealing.
Received: 08.02.1983
Citation:
S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ, “Second harmonic generation during laser annealing of the surface of gallium arsenide”, Kvantovaya Elektronika, 10:6 (1983), 1077–1078 [Sov J Quantum Electron, 13:6 (1983), 687–688]
Linking options:
https://www.mathnet.ru/eng/qe4269 https://www.mathnet.ru/eng/qe/v10/i6/p1077
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