S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ, “Second harmonic generation during laser annealing of the surface of gallium arsenide”, Kvantovaya Elektronika, 10:6 (1983), 1077–1078 [Sov J Quantum Electron, 13:6 (1983), 687

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Kvantovaya Elektronika, 1983, Volume 10, Number 6, Pages 1077–1078 (Mi qe4269)

This article is cited in 3 scientific papers (total in 3 papers)

Letters to the editor

Second harmonic generation during laser annealing of the surface of gallium arsenide

S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ

Full-text PDF (348 kB) Citations (3)

Abstract: The process of recrystallization of the surface of GaAs during pulsed laser annealing was investigated using generation (by reflection from the surface) of the second harmonic of mode-locked radiation from another laser. The recrystallization time did not exceed 30–40 nsec. The results were accounted for by the melting theory of laser annealing.

Received: 08.02.1983

English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 6, Pages 687–688
DOI: https://doi.org/10.1070/QE1983v013n06ABEH004269

Bibliographic databases:

Document Type: Article

UDC: 621.373.826

PACS: 42.65.Cq, 81.40.Ef, 42.60.Kg

Language: Russian

Citation: S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ, “Second harmonic generation during laser annealing of the surface of gallium arsenide”, Kvantovaya Elektronika, 10:6 (1983), 1077–1078 [Sov J Quantum Electron, 13:6 (1983), 687–688]

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https://www.mathnet.ru/eng/qe4269

https://www.mathnet.ru/eng/qe/v10/i6/p1077

This publication is cited in the following 3 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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