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Kvantovaya Elektronika, 1983, Volume 10, Number 3, Pages 647–649 (Mi qe4177)  

Brief Communications

XeF* visible laser with selective optical excitation

V. M. Buchnev, A. D. Klementov, V. M. Nesterov, S. A. Pendyur, P. B. Sergeev, B. N. Toleutaev, S. V. Shul'ga
Abstract: The coefficient representing utilization of the electron beam energy (K ~2.3×10–3) in dissociation of XeF2 vapor was determined. This dissociation occurred under the action of selective radiation emitted from electron-beam-excited Xe*2 dimers. Lasing was observed as a result of the C–A transition in the XeF* molecule (λ = 480 nm) and the output energy was 3.1 mJ.
Received: 03.05.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 3, Pages 394–395
DOI: https://doi.org/10.1070/QE1983v013n03ABEH004177
Bibliographic databases:
Document Type: Article
UDC: 621.373.8.038.84
PACS: 42.55.Fn
Language: Russian


Citation: V. M. Buchnev, A. D. Klementov, V. M. Nesterov, S. A. Pendyur, P. B. Sergeev, B. N. Toleutaev, S. V. Shul'ga, “XeF* visible laser with selective optical excitation”, Kvantovaya Elektronika, 10:3 (1983), 647–649 [Sov J Quantum Electron, 13:3 (1983), 394–395]
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    Квантовая электроника Quantum Electronics
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