Spectral gain profile of a GaAlAs injection heterolaser

An experimental investigation was made of the gain profile of an injection heterolaser and a satisfactory generalization of this profile was obtained in the form of expressions analogous to those that follow from the usual model of heavily doped gallium arsenide in which transitions take place between the density-of-states tail at the bottom of the conduction band and a local level, violating the selection rules on the quasimomentum.