Degradation of the electronic excitation of the 4F3/2 state of Nd3+ ions in a γ-La2S3 single crystal

An investigation is made of processes of population and relaxation of the ⁴F_3/2 neodymium upper active level in a γ-La₂S₃ semiconductor single crystal and the energy transfer microparameters are determined. Nonradiative transfer of energy from a continuous set of traps to the ⁴F_3/2 upper active level of neodymium was observed when the sample was excited with λ = 0.53 μ radiation and cross relaxation from excited states located above the ⁴F_3/2 upper active level was identified.