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Kvantovaya Elektronika, 1983, Volume 10, Number 2, Pages 364–370 (Mi qe4091)  

Radiative characteristics of injection lasers with short resonators

T. V. Batyunina, Yu. L. Bessonov, V. I. Borodulin, M. V. Zverkov, V. P. Konyaev, O. A. Pashko, S. A. Pashko, V. A. Simakov, V. I. Shveĭkin
Abstract: An investigation was made of the threshold, power, and spectral characteristics of radiation emitted by GaAs–AlAs heterostructure injection lasers with double confinement and short (up to 16 μ) plane-parallel resonators. The lasers had mesastripe contacts 10–14 μ wide. The gain coefficient was a linear function of the pump current density in the gain coefficient range 10–400 cm–1. The minimum threshold currents in the lasers were 27–30 mA and single-frequency lasing regime was observed right up to pump currents of (1.6–1.7) Ith. The maximum single-frequency output power was 35 mW. It should be possible to retain singlefrequency regime in such lasers when the pump current was subjected to high-frequency modulation.
Received: 20.01.1982
English version:
Soviet Journal of Quantum Electronics, 1983, Volume 13, Issue 2, Pages 201–204
DOI: https://doi.org/10.1070/QE1983v013n02ABEH004091
Bibliographic databases:
Document Type: Article
UDC: 621.382.3
PACS: 42.60.Da, 42.55.Px
Language: Russian


Citation: T. V. Batyunina, Yu. L. Bessonov, V. I. Borodulin, M. V. Zverkov, V. P. Konyaev, O. A. Pashko, S. A. Pashko, V. A. Simakov, V. I. Shveĭkin, “Radiative characteristics of injection lasers with short resonators”, Kvantovaya Elektronika, 10:2 (1983), 364–370 [Sov J Quantum Electron, 13:2 (1983), 201–204]
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    Квантовая электроника Quantum Electronics
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