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Kvantovaya Elektronika, 1991, Volume 18, Number 2, Pages 175–176 (Mi qe3738)  

Lasers

Increase of the threshold current of InGaAsP heterolasers during aging at elevated temperatures

R. I. Andreeva, A. A. Kochetkov
Abstract: An investigation was made of the service life of InGaAsP heterolasers (σ = 1.3 μm) over periods of 3 X 104 h at Т = 65 °C. Expressions describing an increase in the threshold current during tests were obtained. It was found that the relative change in the threshold current could be used in quality control of heterolasers and in selection of samples with a long expected service life.
Received: 08.05.1990
English version:
Soviet Journal of Quantum Electronics, 1991, Volume 21, Issue 2, Pages 155–156
DOI: https://doi.org/10.1070/QE1991v021n02ABEH003738
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.60.Jf
Language: Russian


Citation: R. I. Andreeva, A. A. Kochetkov, “Increase of the threshold current of InGaAsP heterolasers during aging at elevated temperatures”, Kvantovaya Elektronika, 18:2 (1991), 175–176 [Sov J Quantum Electron, 21:2 (1991), 155–156]
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    Квантовая электроника Quantum Electronics
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