Reproducibility of the impedance of (InGa)PAs laser diodes with a mesa structure buried under semiinsulating layers

An experimental investigation was made of the reproducibility of the microwave impedance of (InGa)PAs heterolasers with a mesa structure buried under semiinsulating layers. A microwave board was developed for calibration of the instruments used to determine the s parameters of quadripoles in measurement of the laser diode impedance. Panoramic measurements were made of the active and reactive components of the impedance of 10 laser diodes with the same structure made from three different wafers. The results obtained demonstrated a satisfactory reproducibility of the impedance of laser diodes of this type in the range 0.05–5.0 GHz.