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Kvantovaya Elektronika, 1992, Volume 19, Number 7, Pages 668–670 (Mi qe3555)  

Control of laser radiation parameters

Reproducibility of the impedance of (InGa)PAs laser diodes with a mesa structure buried under semiinsulating layers

A. A. Bliskavitskiĭ, Yu. K. Vladimirov, S. Kh. Taktashov
Abstract: An experimental investigation was made of the reproducibility of the microwave impedance of (InGa)PAs heterolasers with a mesa structure buried under semiinsulating layers. A microwave board was developed for calibration of the instruments used to determine the s parameters of quadripoles in measurement of the laser diode impedance. Panoramic measurements were made of the active and reactive components of the impedance of 10 laser diodes with the same structure made from three different wafers. The results obtained demonstrated a satisfactory reproducibility of the impedance of laser diodes of this type in the range 0.05–5.0 GHz.
Received: 04.10.1991
English version:
Soviet Journal of Quantum Electronics, 1992, Volume 22, Issue 7, Pages 618–620
DOI: https://doi.org/10.1070/QE1992v022n07ABEH003555
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Lh, 07.60.-j, 06.20.fb
Language: Russian


Citation: A. A. Bliskavitskiĭ, Yu. K. Vladimirov, S. Kh. Taktashov, “Reproducibility of the impedance of (InGa)PAs laser diodes with a mesa structure buried under semiinsulating layers”, Kvantovaya Elektronika, 19:7 (1992), 668–670 [Sov J Quantum Electron, 22:7 (1992), 618–620]
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