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Kvantovaya Elektronika, 1992, Volume 19, Number 5, Pages 449–450 (Mi qe3470)  

Interaction of laser radiation with matter. Laser plasma

Dynamics of the development of a microrelief on the surface of silicon under the action of high-power laser pulses

A. F. Banishev, I. M. Chistyakov
Abstract: The method of local interferometry with a spatial resolution of ~ 5 μm was used in an investigation of the dynamics of the development of small-scale deformations and periodic relief of the surface of silicon in the zone of irradiation with laser pulses. During the initial stage of such irradiation the changes in the surface relief were of random nature. Ordered surface fluctuations (surface wave) appeared in the molten phase. The initial period of the surface wave was ~ 20 μs and it increased after the end of a laser pulse. Complete damping (i.e., formation of a periodic relief) was observed in these experiments in ~ 5 ms from the end of a laser pulse.
Received: 29.11.1991
English version:
Soviet Journal of Quantum Electronics, 1992, Volume 22, Issue 5, Pages 408–409
DOI: https://doi.org/10.1070/QE1992v022n05ABEH003470
Bibliographic databases:
Document Type: Article
UDC: 537.311.322
PACS: 61.80.Ba, 79.20.Ds, 68.47.Fg
Language: Russian


Citation: A. F. Banishev, I. M. Chistyakov, “Dynamics of the development of a microrelief on the surface of silicon under the action of high-power laser pulses”, Kvantovaya Elektronika, 19:5 (1992), 449–450 [Sov J Quantum Electron, 22:5 (1992), 408–409]
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