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Kvantovaya Elektronika, 1992, Volume 19, Number 4, Pages 369–371 (Mi qe3437)  

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Influence of forbidden transitions on the gain-band structure of XeCl molecules

V. T. Platonenko, M. K. Shayakhmetova
Abstract: The influence of forbidden transitions on the structure and profile of the BX gain band of XeCl molecules was investigated. The band calculated taking into account forbidden transitions showed better agreement with the experimentally determined lasing wavelengths of an XeCl laser than the band calculated assuming only allowed transitions.
Received: 07.06.1991
English version:
Soviet Journal of Quantum Electronics, 1992, Volume 22, Issue 4, Pages 334–336
DOI: https://doi.org/10.1070/QE1992v022n04ABEH003437
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Lt, 42.60.By, 42.60.Lh, 42.60.Jf
Language: Russian


Citation: V. T. Platonenko, M. K. Shayakhmetova, “Influence of forbidden transitions on the gain-band structure of XeCl molecules”, Kvantovaya Elektronika, 19:4 (1992), 369–371 [Sov J Quantum Electron, 22:4 (1992), 334–336]
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    Квантовая электроника Quantum Electronics
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