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Kvantovaya Elektronika, 1992, Volume 19, Number 2, Pages 133–135 (Mi qe3354)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Injection-locking regime in a high-power XeCl laser

Yu. I. Bychkov, N. G. Ivanov, S. E. Kovalenko, V. F. Losev, Yu. N. Panchenko
Full-text PDF (774 kB) Citations (1)
Abstract: The results are presented of an experimental investigation of injection locking in an XeCl laser with output energies of 30–40 J in a 300-ns pulse, using a 100-ns external signal pulse with a 0.2 cm–1 line width and an energy of 10 mJ. When the axial region of an unstable resonator was filled by the external signal from the start of pumping to the attainment of the lasing threshold, 90% of the lasing energy was concentrated in the injected line.
Received: 21.06.1991
English version:
Soviet Journal of Quantum Electronics, 1992, Volume 22, Issue 2, Pages 116–117
DOI: https://doi.org/10.1070/QE1992v022n02ABEH003354
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Lt, 42.60.By, 42.60.Da, 42.60.Jf, 42.60.Fc
Language: Russian


Citation: Yu. I. Bychkov, N. G. Ivanov, S. E. Kovalenko, V. F. Losev, Yu. N. Panchenko, “Injection-locking regime in a high-power XeCl laser”, Kvantovaya Elektronika, 19:2 (1992), 133–135 [Sov J Quantum Electron, 22:2 (1992), 116–117]
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  • https://www.mathnet.ru/eng/qe3354
  • https://www.mathnet.ru/eng/qe/v19/i2/p133
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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