Investigation of the current-voltage characteristics of injection lasers with isoperiodic PbSnSeTe layers

An investigation was made of the current-voltage characteristics of injection lasers with isoperiodic PbSnSeTe layers and of double-heterostructure lasers with a controlled carrier-density profile, based on lead selenide. The investigation was carried out in the temperature range 20–80 K. The methods used in the fabrication of lasers and in measurements under pulsed conditions are described. It is shown that at 20 K the tunnel component of the current becomes important. An increase in temperature increases the role of the thermal current and already at 80 K the diffusion component becomes the dominant one. The tunnel component of the threshold current at 80 K is ~0.25.