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Kvantovaya Elektronika, 1971, Number 6, Pages 110–112 (Mi qe3310)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Time characteristics of heterojunction injection lasers

L. N. Kurbatov, V. I. Molochev, V. V. Nikitin, A. I. Sharin
Full-text PDF (670 kB) Citations (2)
Abstract: An experimental investigation was made of the time characteristics of GaAs–GaxAl1–xAs injection lasers. The investigation was carried out in a wide range of temperatures and injection currents. The delay time of the coherent emission and transient processes was investigated as a function of the injection current and the diode temperature.
Received: 27.05.1971
English version:
Soviet Journal of Quantum Electronics, 1972, Volume 1, Issue 6, Pages 655–657
DOI: https://doi.org/10.1070/QE1972v001n06ABEH003310
Document Type: Article
UDC: 621.378.3
PACS: 42.55.Px, 42.60.By, 42.60.Jf
Language: Russian


Citation: L. N. Kurbatov, V. I. Molochev, V. V. Nikitin, A. I. Sharin, “Time characteristics of heterojunction injection lasers”, Kvantovaya Elektronika, 6 (1971), 110–112 [Sov J Quantum Electron, 1:6 (1972), 655–657]
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  • https://www.mathnet.ru/eng/qe/y1971/i6/p110
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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