Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1993, Volume 20, Number 9, Pages 837–838 (Mi qe3155)  

Lasers

Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm

R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev
Abstract: The service lifetime of InGaAsP heterojunction lasers operating at λ = 1.55 μm has been tested. Stepwise tests of this sort reveal the activation energy for the degradation process in the temperature interval 50–70 °C.
Received: 26.02.1993
English version:
Quantum Electronics, 1993, Volume 23, Issue 9, Pages 725
DOI: https://doi.org/10.1070/QE1993v023n09ABEH003155
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.60.Lh
Language: Russian


Citation: R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev, “Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm”, Kvantovaya Elektronika, 20:9 (1993), 837–838 [Quantum Electron., 23:9 (1993), 725]
Linking options:
  • https://www.mathnet.ru/eng/qe3155
  • https://www.mathnet.ru/eng/qe/v20/i9/p837
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:131
    Full-text PDF :61
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024