V. V. Nikitin, V. D. Samoilov, “Laser optron”, Kvantovaya Elektronika, 3 (1971), 23–28 [Sov J Quantum Electron, 1:3 (1971), 219

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Kvantovaya Elektronika, 1971, Number 3, Pages 23–28 (Mi qe3065)

Laser optron

V. V. Nikitin, V. D. Samoilov

Full-text PDF (1065 kB)

Abstract: The results are given of an investigation of an optron consisting of an inhomogeneously excited injection laser and a photodiode. It is shown that such a laser optron is a beam-of-light transistor with a power gain of 10². Such an optron can be used in optical data processing.

Received: 11.09.1970

English version:
Soviet Journal of Quantum Electronics, 1971, Volume 1, Issue 3, Pages 219–223
DOI: https://doi.org/10.1070/QE1971v001n03ABEH003065

Document Type: Article

UDC: 621.378.329

PACS: 42.79.Ta, 42.79.Hp, 42.55.Px, 85.60.Dw

Language: Russian

Citation: V. V. Nikitin, V. D. Samoilov, “Laser optron”, Kvantovaya Elektronika, 3 (1971), 23–28 [Sov J Quantum Electron, 1:3 (1971), 219–223]

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https://www.mathnet.ru/eng/qe3065

https://www.mathnet.ru/eng/qe/y1971/i3/p23

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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