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Kvantovaya Elektronika, 1993, Volume 20, Number 1, Pages 45–46 (Mi qe2932)  
Lasers

Changes in the threshold current of an InGaAsP heterojunction laser (λ = 1.55 μm) due to aging and irradiation

R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev
Full-text PDF (121 kB)
Abstract: The degradation of cw InGaAsP heterojunction lasers (λ = 1.55 μm) due to aging and γ bombardment has been studied. A parameter which is a measure of the equivalence of the kinetics of these processes has been determined.
Received: 16.07.1992
English version:
Quantum Electronics, 1993, Volume 23, Issue 1, Pages 38–39
DOI: https://doi.org/10.1070/QE1993v023n01ABEH002932
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 73.40.Kp
Language: Russian


Citation: R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev, “Changes in the threshold current of an InGaAsP heterojunction laser (λ = 1.55 μm) due to aging and irradiation”, Kvantovaya Elektronika, 20:1 (1993), 45–46 [Quantum Electron., 23:1 (1993), 38–39]
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    		Квантовая электроника Quantum Electronics
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