Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1993, Volume 20, Number 1, Pages 31–38 (Mi qe2930)  

Lasers

Theoretical analysis of profiled quantum-well laser structures

P. G. Eliseev, R. F. Nabiev, A. I. Onishchenko

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract: The energy spectrum and transition matrix elements are investigated for a heterostructure laser with an ultra-thin active layer whose thickness is modulated in at least one direction. It is shown that, depending on the depth of the spatial modulation, the density-of-states distribution for such structures has peaks and valleys. This distribution is a transitional case between the spectrum of a one-dimensional quantum well and the spectrum of an array of parallel quantum wires or of a two-dimensional array of quantum dots (in the case of a two-dimensional spatial modulation). Proper choice of the parameters of a profiled structure can result in advantages over the usual quantum-well structure: a peak in the spectrum fixes the laser wavelength and increases the differential gain within a pump-current interval of practical interest, while a valley in the density of states weakens the temperature dependence of the threshold current. The matrix element of the working transitions in a quantum-well structure depends weakly on the quasimomentum in the periodic field, while the forbidden transitions are rather weak compared to the working transitions.
Received: 16.07.1992
English version:
Quantum Electronics, 1993, Volume 23, Issue 1, Pages 26–32
DOI: https://doi.org/10.1070/QE1993v023n01ABEH002930
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.70.Hj, 42.60.Da, 42.60.Fc, 42.60.Jf
Language: Russian


Citation: P. G. Eliseev, R. F. Nabiev, A. I. Onishchenko, “Theoretical analysis of profiled quantum-well laser structures”, Kvantovaya Elektronika, 20:1 (1993), 31–38 [Quantum Electron., 23:1 (1993), 26–32]
Linking options:
  • https://www.mathnet.ru/eng/qe2930
  • https://www.mathnet.ru/eng/qe/v20/i1/p31
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:104
    Full-text PDF :55
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024