Abstract:
The AlGaAs/GaAs laser heterostructure with the InGaAs quantum well is studied by the contactless photoreflection method upon local optical pumping. Unlike the conventional photoreflection method, regions on the sample surface illuminated by the probe and pump light are spatially separated. The method allows one to separate photoluminescence and photoreflection signals and to construct the three-dimensional energy band diagram of the laser structure.
Citation:
M. A. Chernikov, A. E. Sotnikov, O. A. Ryabushkin, P. A. Trubenko, I. Berishchev, A. Ovchinnikov, “Photoreflection from a locally optically pumped semiconductor laser structure”, Kvantovaya Elektronika, 34:9 (2004), 875–877 [Quantum Electron., 34:9 (2004), 875–877]
Linking options:
https://www.mathnet.ru/eng/qe2885
https://www.mathnet.ru/eng/qe/v34/i9/p875
This publication is cited in the following 2 articles:
L. P. Avakyants, P. Yu. Bokov, E. V. Glazyrin, I. P. Kazakov, A. V. Chervyakov, Semiconductors, 45:3 (2011), 320
O. A. Ryabushkin, E. I. Lonskaya, A. E. Sotnikov, M. A. Chernikov, phys stat sol (a), 202:7 (2005), 1282