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Nonlinear optical phenomena
Self-reflection effect in semiconductors in a two-pulse regime
P. I. Khadzhi, L. Yu. Nad'kin Department of Physics and Mathematics, Pridnestrie State University, Tiraspol
Abstract:
Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.
Received: 09.07.2004
Citation:
P. I. Khadzhi, L. Yu. Nad'kin, “Self-reflection effect in semiconductors in a two-pulse regime”, Kvantovaya Elektronika, 34:12 (2004), 1173–1176 [Quantum Electron., 34:12 (2004), 1173–1176]
Linking options:
https://www.mathnet.ru/eng/qe2793 https://www.mathnet.ru/eng/qe/v34/i12/p1173
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Statistics & downloads: |
Abstract page: | 133 | Full-text PDF : | 68 | First page: | 1 |
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