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This article is cited in 12 scientific papers (total in 12 papers)
Lasers
Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers
M. M. Zvereva, D. V. Peregoudovb, I. V. Sedovac, S. V. Sorokinc, S. V. Ivanovc, P. S. Kop'evc a State Research Center of Russian Federation "Troitsk Institute for Innovation and Fusion Research"
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
c Ioffe Institute, St. Petersburg
Abstract:
The parameters of 494–555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8–30-keV electron beam are studied. The minimum threshold current density (0.6–0.8 A cm-2 at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion.
Received: 28.06.2004
Citation:
M. M. Zverev, D. V. Peregoudov, I. V. Sedova, S. V. Sorokin, S. V. Ivanov, P. S. Kop'ev, “Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers”, Kvantovaya Elektronika, 34:10 (2004), 909–911 [Quantum Electron., 34:10 (2004), 909–911]
Linking options:
https://www.mathnet.ru/eng/qe2752 https://www.mathnet.ru/eng/qe/v34/i10/p909
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Abstract page: | 223 | Full-text PDF : | 101 | First page: | 1 |
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