Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

The metalorganic vapour phase epitaxy was used for growing GaInP/AlGaInP periodic structures with 25 quantum wells. The active elements based on these structures were prepared for a laser longitudinally pumped by a scanning electron beam. The structure is intended for resonance periodic gain in the case when the quantum wells are at the antinodes of the resonator mode corresponding to the peak of the gain line. The effect of the structural inhomogeneities over the thickness (up to 5%) on the lasing parameters is studied, as well as the temperature detuning from the resonant gain conditions. It is shown that the period of the structure must differ from the optimal value by no more than 0.7% for attaining a 10% uniformity in the lasing threshold along the active element.