Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2004, Volume 34, Number 3, Pages 199–202 (Mi qe2610)  

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

A 650-J XeCl laser

È. N. Abdullina, D. M. Grishina, V. P. Gubanova, V. B. Zorina, A. A. Kima, B. M. Koval'chuka, E. V. Kumpyaka, J. Liub, A. V. Morozova, V. S. Skakuna, A. S. Stepchenkoa, V. F. Tarasenkoa, V. S. Tolkacheva, N. V. Tsoia, P. M. Shchanina

a Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk
b Chinease North-West Institute of Nuclear Technologies, China
Full-text PDF (272 kB) Citations (3)
Abstract: A 308-nm XeCl laser with an active volume of 200 L is described and the results of its tests are presented. The output energy of 660 J is obtained by pumping the Ar : Xe : HCl = 1520 : 40 : 2-Torr mixture. The FWHM laser pulse duration is ~350 ns. The nonuniformity of the laser-radiation density distribution over the cross section of the output beam in the near-field zone is within 10%. An accelerator that forms a radially converging electron beam with an electron energy of up to 550 keV, a vacuum-diode current of up to 320kA, a beam-current pulse duration of ~1 μs, and a beam current of up to 250 kA is used to pump the system. Two linear transformers with a 98-kJ energy stored in the primary storage serve as high-voltage sources. To reduce the effect of the self-magnetic field on the beam formation, the vacuum diode is divided into six diodes magnetically insulated from each other.
Received: 01.09.2003
English version:
Quantum Electronics, 2004, Volume 34, Issue 3, Pages 199–202
DOI: https://doi.org/10.1070/QE2004v034n03ABEH002610
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 42.60.By, 42.60.Jf
Language: Russian


Citation: È. N. Abdullin, D. M. Grishin, V. P. Gubanov, V. B. Zorin, A. A. Kim, B. M. Koval'chuk, E. V. Kumpyak, J. Liu, A. V. Morozov, V. S. Skakun, A. S. Stepchenko, V. F. Tarasenko, V. S. Tolkachev, N. V. Tsoi, P. M. Shchanin, “A 650-J XeCl laser”, Kvantovaya Elektronika, 34:3 (2004), 199–202 [Quantum Electron., 34:3 (2004), 199–202]
Linking options:
  • https://www.mathnet.ru/eng/qe2610
  • https://www.mathnet.ru/eng/qe/v34/i3/p199
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:227
    Full-text PDF :120
    First page:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024