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Kvantovaya Elektronika, 2003, Volume 33, Number 11, Pages 941–948 (Mi qe2528)  

This article is cited in 7 scientific papers (total in 7 papers)

Lasers

Stability and self-stabilisation of single-frequency lasing in a semiconductor laser

D. V. Batraka, A. P. Bogatovb, F. F. Kamenetsa

a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (184 kB) Citations (7)
Abstract: The problem of stability of single-frequency lasing is considered using a model including one lasing mode and two nearest subthreshold modes. It is shown that, the parametric interaction of the laser and subthreshold modes, due to the electron concentration beats at the intermode frequency, can cause the self-stabilisation of the single-frequency lasing regime, in which the laser frequency detuning with respect to the spectral gain maximum can exceed the mode interval, and spectral hysteresis can be observed.
Received: 15.01.2003
English version:
Quantum Electronics, 2003, Volume 33, Issue 11, Pages 941–948
DOI: https://doi.org/10.1070/QE2003v033n11ABEH002528
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Mi
Language: Russian


Citation: D. V. Batrak, A. P. Bogatov, F. F. Kamenets, “Stability and self-stabilisation of single-frequency lasing in a semiconductor laser”, Kvantovaya Elektronika, 33:11 (2003), 941–948 [Quantum Electron., 33:11 (2003), 941–948]
Linking options:
  • https://www.mathnet.ru/eng/qe2528
  • https://www.mathnet.ru/eng/qe/v33/i11/p941
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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