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This article is cited in 16 scientific papers (total in 16 papers)
Letters
Superbroadband high-power superluminescent diode emitting at 920 nm
D. S. Mamedova, V. V. Prokhorova, S. D. Yakubovichb a Superlum Diodes Ltd., Moscow
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Abstract:
The physical parameters of superluminescent diodes (SLDs) based on a single-layer quantum-well heterostructure with the (InGa)As active layer and a graded-index waveguide are studied. The power at the output of a single-mode fibre aligned with respect to the diode was 1 – 10 mW in the regime of spatially homogeneous injection depending on the length of the SLD active channel. The width of the emission spectrum was 100 – 110 nm, corresponding to the coherence length 7.6 – 8.8 μm.
Received: 14.01.2003
Citation:
D. S. Mamedov, V. V. Prokhorov, S. D. Yakubovich, “Superbroadband high-power superluminescent diode emitting at 920 nm”, Kvantovaya Elektronika, 33:6 (2003), 471–473 [Quantum Electron., 33:6 (2003), 471–473]
Linking options:
https://www.mathnet.ru/eng/qe2446 https://www.mathnet.ru/eng/qe/v33/i6/p471
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