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Kvantovaya Elektronika, 2003, Volume 33, Number 6, Pages 474–484 (Mi qe2439)  

This article is cited in 12 scientific papers (total in 12 papers)

Invited paper

Penning high-pressure lasers on the 3p – 3s transitions in neon emitting at 703 and 920 nm

D. A. Zayarnyi, I. V. Kholin

P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Abstract: High-pressure lasers with Penning depletion of lower laser levels on the 3p – 3s transitions in neon pumped by a fast electron beam are studied. High-power lasing at 703.2 and 724.5 nm on transitions that were not investigated earlier is reported for the first time. The energy parameters of lasers pumped by an electron beam with a current density of 1.7 A cm-2 are optimised (including the 585.2-nm laser) and the lasing dynamics of these lasers, as well as the dynamics of the small-signal gain and induced ('hot') absorption gain are studied.
Received: 07.10.2002
Revised: 30.01.2003
English version:
Quantum Electronics, 2003, Volume 33, Issue 6, Pages 474–484
DOI: https://doi.org/10.1070/QE2003v033n06ABEH002439
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 42.60.Lh
Language: Russian


Citation: D. A. Zayarnyi, I. V. Kholin, “Penning high-pressure lasers on the 3p – 3s transitions in neon emitting at 703 and 920 nm”, Kvantovaya Elektronika, 33:6 (2003), 474–484 [Quantum Electron., 33:6 (2003), 474–484]
Linking options:
  • https://www.mathnet.ru/eng/qe2439
  • https://www.mathnet.ru/eng/qe/v33/i6/p474
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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