Whether is it possible to produce high concentrations of carriers in a semiconductor for observing the Bose condensate at room temperature?

Experiments allowing the production of carriers at high concentrations (5 × 10¹⁹-10²⁰ cm^-3) in a semiconductor irradiated by femtosecond laser pulses are discussed. At such high concentrations, and at room temperature the formation of the Bose condensate of an electron — hole plasma is expected, which is accompanied by superradiance. A minimal (threshold) energy is determined which should be absorbed in an elementary event for producing a certain concentration of free carriers. When the carrier concentration is high, carriers with opposite mass signs can appear in the conduction band of gallium arsenide and, hence, the efficient Coulomb attraction is possible between carriers in the same band, which should be taken into account in the formation of a correlated state of carriers.