Defect – deformation nanometer self-organisation upon laser recrystallisation of thin amorphous films on substrates

A hidden hexagonal order in the arrangement of nanometer crystal grains formed upon laser recrystallisation of thin films of amorphous silicon on a substrate is experimentally found. The hexagonal ordering of the grains and the extremal dependence of the grain size on the laser pulse energy density are described within the framework of the cooperative defect – deformation mechanism of laser recrystallisation.