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This article is cited in 15 scientific papers (total in 15 papers)
Active media. Lasers
New diode lasers with leaking emission in an optical cavity
V. I. Shveikin, V. A. Gelovani Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Abstract:
A new type of a wide-aperture, high-power and efficient semiconductor laser with emission leaking from an active region and involved in lasing is proposed. The principle of its operation is described. Single-mode semiconductor lasers with output apertures at the optical facet of 5 × 6 μm, 7 × 7.5 μm, and 10 × 10 μm and diffraction-limited divergence angles of emission from 6.9 to 12° in the vertical plane and from 3.3 to 7.7° in the horizontal plane are created for the first time. A single-mode cw output power of 0.5 W is obtained at 980 nm in a single-frequency regime with diffraction-limited divergence angles in the horizontal and vertical planes equal to 5.7° and 12.3°, respectively. In the multimode regime, the output powers of 1.3 and 3.0 W were obtained with small divergence angles for ridge widths of 10 and 50 μm, respectively.
Received: 22.04.2002
Citation:
V. I. Shveikin, V. A. Gelovani, “New diode lasers with leaking emission in an optical cavity”, Kvantovaya Elektronika, 32:8 (2002), 683–688 [Quantum Electron., 32:8 (2002), 683–688]
Linking options:
https://www.mathnet.ru/eng/qe2271 https://www.mathnet.ru/eng/qe/v32/i8/p683
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